Memory Test System


 

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H3000 Series


High -Speed Burn-in & Test System

Target Device
DRAM(DDR,LPDDR)
NAND-Flash 
(*option)
Test Frequency
200MHz / 400Mbps

  System Configuration


Footprint (W*D*H)2,200mm*1,775mm*2,450mm
Chamber-10 ℃~ +150℃ (*-40℃ : option)
Burn-In B'D450mm*570mm, Max.480DUT
Ch. Count1,000DRV / 960IO / 36PS per BIB
Throughput










480DUT/BIB
(2-shared 4-IO@DDR4)
*H3016 - 7,680DUT/sys. (16-BIB)
*H3024 - 11,520DUT/sys. (24-BIB)
*H3032 - 15,360DUT/sys. (32-BIB)
*H3048 - 23,040DUT/sys. (48-BIB)
- Test Program Language is based on C-Language
   (similar with ATE)
- Double Strobe for DDR Mode Testing
- per-Site(BIB) Architecture for high Performance
   (TCPU / RCPU / ALPG / TGFC / PSR)
- High performance RA per Site-Unit (*option)
- PSR & Super-Voltage DPS for Flash Memory (*option)
  *Options can be upgraded with Additional-Units in customer-site.

High-Speed Burn-In & Test System (H3000 Series)

High-Speed Burn-In & Test Engineering System (H3000E)


H3000E


High -Speed Burn-in & Test Engineering System

Target DeviceDRAM(DDR,LPDDR)
NAND Flash (*option)
Test Frequency200MHz / 400Mbps

  System configuration


SlotsMax. 2 Slots
Burn-In B'D450mm*570mm
(max. 480DUT@DDR4)
Ch.Count1,000DRV / 960IO / 36PS per BIB
- Test Program Language is based on C-Language
  (Similar with ATE)
- Double Strobe for DDR Mode Testing
- per-Site(BIB) Architecture for High Performance
  (TCPU / RCPU / ALPG / TGFC / PSR)
- High performance Redundancy Analysis per Site-Unit (*option)
- PSR & Super-Voltage DPS for Flash Memory (*option)