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Memory Test System

 

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UNI650

Memory Wafer Tester

1) System Configuration
Speed
250Mhz
Channel
I/O
6,144
DR3,168
LVDR3,168
DPS2,880
Total15,360
3) Driver/IO
VIL/VIH Range-1.5V~4.5V
Output Current
DC±50mA(AC±100mA)
4) Level Driver
VIL/VIH Range
-5V~7V
Output Current
±60mA
5) DPS
Range
-7V~10V
Output Current
0.25A(-7V~0V)
1A(0V~3V)
0.4A(3V~10V)

H3000 Series

High -Speed Burn-in & Test System

Target Device
DRAM(DDR,LPDDR)
NAND-Flash (*option)
Test Frequency
200MHz / 400Mbps

1)  System Configuration


Footprint (W*D*H)2,200*1,775*2,450(mm)
Chamber-10 ℃~ +150℃ (*-40℃ : option)
Burn-In B'D450*570(mm), Max.480DUT
Ch. Count1,000DRV / 960IO / 36PS (per BIB)
Throughput










480DUT/BIB (2-shared 4-IO@DDR4)
H3016: 7,680DUT/sys. (16-BIB)
H3024: 11,520DUT/sys. (24-BIB)
H3032: 15,360DUT/sys. (32-BIB)
H3048: 23,040DUT/sys. (48-BIB)
- Test Program Language is based on C-Language (similar with ATE)
- Double Strobe for DDR Mode Testing
- per-Site(BIB) Architecture for high performance (TCPU / RCPU / ALPG / TGFC / PSR)
- High performance RA per Site-Unit (*option)
- PSR & Super-Voltage DPS for Flash Memory (*option)
  (*options) can be upgraded with Additional-Units in customer-site.

Memory Wafer Tester (UNI650)

1) System Configuration
Speed
250Mhz
Channel








 I/O
6,144
DR
3,168
LVDR
3,168
DPS2,880
Total
15,360
2) Driver/IO
VIL/VIH Range
-1.5V~4.5V
Output Current
DC±50mA(AC±100mA)
3) Level Driver
VIL/VIH Range
-5V~7V
Output Current
±60mA
4) DPS
Range
-7V~10V
Output Current
0.25A(-7V~0V)
1A(0V~3V)
0.4A(3V~10V)

High-Speed Burn-In & Test System (H3000 Series)

1) Target DeviceDRAM(DDR, LPDDR) / 
NAND-Flash(*option)
2) Test Frequency200MHz / 400Mbps
3) System ConfigurationFootprint2,200mm*1,775mm*2,450mm(W*D*H)
Chamber-10℃ ~ +150℃  (*option: -40℃ )
Burn-In B'D450mm*570mm / max. 480DUT
Ch. Count1,000DRV / 960IO/ 36PS per BIB
Throughput480DUT/BIB (2-shared 4-IO@DDR4)
H3016: 7,680DUT/sys. (16-BIB)
H3024: 11,520DUT/sys. (24-BIB)
H3032: 15,360/sys. (32-BIB)
H3048: 23,040DUT/sys. (48-BIB)
- Test Program Language based on C-Language (Similar ATE)
- Double Strobe for DDR Mode Testing
- per-Site(BIB) Architecture for high Performance.
   (TCPU / RCPU / ALPG / TGFC / PSR) 
- High performance RA(Redundancy Analysis) per Site-Unit (*option)
- PSR & Super-Voltage DPS for Flash Memory (*option)
- (*Option) can be upgraded with Additional-Units in customer-site.


High-Speed Burn-In & Test Engineering System (H3000E)

1) Target DeviceDRAM(DDR, LPDDR) / 
NAND-Flash(*option)
2) Test Frequency200MHz / 400Mbps
3) System ConfigurationSlots #2,200mm*1,775mm*2,450mm(W*D*H)
Burn-In B'D450mm*570mm / max. 480DUT@DDR4
Ch. Count1,000DRV / 960IO/ 36PS per BIB
- Test Program Language based on C-Language (Similar ATE)
- Double Strobe for DDR Mode Testing
- per-Site(BIB) Architecture for high Performance
  (TCPU / RCPU / ALPG / TGFC / PSR)
- High performance RA(Redundancy Analysis) per Site-Unit (*option)
- PSR & Super-Voltage DPS for Flash Memory (*option)


H3000E

High -Speed Burn-in & Test Engineering System

Target DeviceDRAM(DDR,LPDDR)
NAND Flash (*option)
Test Frequency200MHz / 400Mbps

1)  System configuration


SlotsMax. 2 Slots
Burn-In B'D450mm*570mm
(max. 480DUT@DDR4)
Ch.Count1,000DRV / 960IO / 36PS per BIB
- Test Program Language is based on C-Language (Similar with ATE)
- Double Strobe for DDR Mode Testing
- per-Site(BIB) Architecture for High Performance (TCPU / RCPU / ALPG / TGFC / PSR)
- High performance Redundancy Analysis per Site-Unit (*option)
- PSR & Super-Voltage DPS for Flash Memory (*option)